8 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 t e e h s a t a d ne3513m04 n-channel gaas hj-fet, x to ku band low noise and high-gain fea t ure s ? low noise figure a n d hi gh ass o ciated gain: nf = 0.45 db typ ., g a = 13 db t y p. @ v d s = 2 v, i d = 10 m a , f = 12 g h z nf = 0.5 db t y p. , g a = 1 2 db t y p. @ v ds = 2 v, i d = 6 m a , f = 12 ghz (refere n ce value ) ? f l a t - l ead 4 - p in t h in- typ e s upe r m i nim o l d ( m 0 4 ) pac k age applications ? db s l n b gai n - st a ge, m i x-st age ? l o w noi se am plifier fo r m i c row a v e c o mm u n ication s ys tem ordering information pa rt number orde r numbe r pack a g e qua n tity ma rk ing supply i ng for m ne35 13m0 4 - t 2 ne35 13m0 4 - t 2-a 3 kpcs/reel ne35 13m0 4 - t 2b ne35 13m0 4 - t 2b-a f lat -lead 4-pi n t hin- t y pe s u per minimold (m04) (pb-f ree) 15 kpcs/reel v84 ? embosse d ta p e 8 mm w i de ? pin 1 ( s ourc e), pin 2 (drain) fac e t he p e r f o r ati o n s i de of t h e tape rema r k t o order evalu a tion sam p les, pleas e contact y o ur n e arb y s a les o ffice. part number fo r sample ord e r: ne351 3m04-a absolute maxim u m ratings (t a = +25 c, unless otherw ise specified) para mete r symbol ratings unit drain to s o urc e voltag e v d s 4 .0 v gate to source voltage v g s ?3.0 v i t n e r r u c n i a r d d i d s s ma i t n e r r u c e t a g g 80 a t o tal p o w e r d i ssipati o n note p t o t 125 m w chan n e l t e m per a t u r e t c h + 125 c storage t e mperature t s t g ?65 t o + 125 c note: mounte d on 1 . 08 c m 2 1 .0 mm ( t) glass epo xy pw b ca utio n observe p r e c aution s wh en handlin g be cause these d evi ce s are se nsitive to electrostati c disch arg e. r09 d s0 028e j01 00 rev.1.00 oct 18, 201 1 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne35 13m04 8 f o 2 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 recommended operating range (t a = +25 c, unless otherw i se specified) para mete r symbol min . t yp. m a x. unit drain to s o urc e voltag e v d s + 1 + 2 + 3 v i t n e r r u c n i a r d d 3 10 15 ma p r e w o p t u p n i i n ? ? 0 d bm electrical charact e r ist i cs (t a = +25 c, unl e ss otherw ise specified) pa rame ter sy mbol test conditi o n s min. typ. m a x. unit gate to source leak curr ent i gso v g s 0 1 5 . 0 ? v 0 . 3 ? = a saturated d r a i n current i d s s v d s = 2 v , v g s = 0 v 15 30 60 ma gate to source cut-off voltage v gs ( o f f ) v d s = 2 v , i d = 100 a ?0.2 ?0.5 ?1.3 v t ransconducta nce gm v d s = 2 v , i d = 10 m a 50 65 ? m s b d 5 6 . 0 5 4 . 0 ? f n e r u g i f e s i o n associated gain g a v d s = 2 v , i d = 10 ma, f = 12 ghz 11.5 13 ? db standard characteri s t ics for reference ( t a = +25 c, unless otherw ise specified) pa rame ter sy mbol test condition s re fe re nce va l u e unit 5 . 0 f n e r u g i f e s i o n db associated gain g a v d s = 2 v , i d = 6 ma, f = 12 g h z 12 db a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne35 13m04 8 f o 3 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 typical charac t e ristics (t a = +25 c, unless otherw ise specified) total power dissipation p tot (mw) ambient temperature t a (c) vs. ambient temperature total power dissipation 250 200 150 125 100 50 0 50 100 125 150 200 250 drain current i d (ma) gate to source voltage v gs (v) drain current vs. gate to source voltage v ds = 2 v 60 50 40 30 20 10 0 ?0.8 ?0.6 ?0.4 ?0.2 0 drain current i d (ma) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain current minimum noise figure, f = 12 ghz v ds = 2 v 6 8 10 12 14 4 2 16 0 nf min g a 1.2 1.4 1.6 0.6 0.8 1.0 0.2 0.4 0.0 0 3 0 25 20 15 10 5 drain current i d (ma) drain to source voltage v ds (v) drain to source voltage drain current vs. v gs = 0 v ?0.3 v ?0.1 v ?0.4 v 60 50 40 30 20 10 0 0.00 1.00 2.00 3.00 4.00 ?0.2 v frequency f (ghz) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. frequency minimum noise figure, nf min g a v ds = 2 v i d = 6 ma 1.2 1.0 1.1 0.6 0.7 0.8 0.9 0.3 0.4 0.5 0.1 0.2 0.0 24 20 22 6 8 10 12 14 18 4 2 16 0 02468 10 12 14 16 18 20 frequency f (ghz) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. frequency minimum noise figure, nf min g a v ds = 2 v i d = 10 ma 1.2 1.0 1.1 0.6 0.7 0.8 0.9 0.3 0.4 0.5 0.1 0.2 0.0 24 20 22 6 8 10 12 14 18 4 2 16 0 02468 10 12 14 16 18 20 rem ar k the grap hs in dicate nomin al characte risti c s. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne35 13m04 8 f o 4 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 s-parameters s - param et ers/noi s e -pa r a m eters a r e p r ovi d e d o n o u r web s ite i n a f o r m ( s 2 p ) t h a t e n a b l es di rect i m port t o a m i crowa v e circu it s i m u lat o r w ithou t k ey b o a r d inpu t. click h ere t o d o w n l o a d s-p ar a m eters. [rf and mi crowave] [devic e parameters ] url http://www2.re ne sa s . c om / m i c r ow a v e/ a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne35 13m04 8 f o 5 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 mounting pad dimensions flat-lead 4-pin thin-t ype super minimold ( m 04) (unit: mm) - r ef e renc e 1 - 0.8 0.74 1 3 2 4 1.0 1.0 0.9 1.0 0.5 th - r ef e renc e 2 - 2 1 3 4 0.6 1.6 1.25 1.3 0.6 0.5 rem ar k the mounting pad layout in this do cum ent is for refe re nce only. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne35 13m04 8 f o 6 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 package dimensions flat-lead 4-pin thin-t ype super minimold ( m 04) (unit: mm) pin connections 1. source 2. drain 3. source 4. gate 0.590.05 0.11 +0.1 ?0.05 (bottom view) 3 4 2 1 1.25 2.00.1 1.30 (1.05) 0.60 0.65 0.65 0.65 1.30 1.25 2.00.1 2 1 3 4 1.250.1 2.050.1 0.30 +0.1 ?0.05 0.40 +0.1 ?0.05 0.30 +0.1 ?0.05 0.30 +0.1 ?0.05 v84 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne35 13m04 8 f o 7 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 recommended s o ldering conditions thi s p r o duct s h o u ld b e s o l d e r e d a n d m o u n t ed u n d e r t h e follo w ing recom m ended c ond itions . f o r s o ldering m et hods and c o n d itio ns o t h e r t h a n t hose r eco mmen d ed b el o w , c ont act you r n ea r b y s ales office. l o b m y s n o i t i d n o c s n o i t i d n o c g n i r e d l o s d o h t e m g n i r e d l o s infrared reflo w peak temper ature (pack age s u r face temper a t ure) : 260 c or b e l o w s s e l r o s d n o c e s 0 1 : e r u t a r e p m e t k a e p t a e m i t t i me at temper ature of 2 2 0 c or hig her : 60 seconds o r less prehe ating tim e at 120 to 1 8 0c : 120 30 seconds maximum num ber of reflo w pr ocesses : 3 times maximum chl o r i ne co ntent of rosin flu x (% m a ss) : 0.2% (w t.) or belo w i r260 partial h e ating peak temper a ture ( termina l te mperatu r e) : 350 c or b e l o w sold erin g time (per side o f d e vice) : 3 seconds or l e ss maximum chl o r i ne co ntent of rosin flu x (% m a ss) : 0.2% (w t.) or belo w hs35 0 ca utio n do not u s e di fferent sol deri ng metho ds t ogethe r (ex c e pt for partial h eating ) . a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne35 13m04 8 f o 8 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 2 0 0 s d 9 0 r oct 18, 2011 caution gaas p r o d ucts t his product use s gallium arsenid e (g aas). gaas vapor and po w der a r e haza r dous to human health if inhaled or ingest ed, so please observe the follow i ng poi nts. ? f ollow r elat e d law s an d or dinan c es w hen dis pos i ng of the pr oduct . if there a r e no a pplicable law s and/ or o r dinances, dispose of the product as reco mmended belo w . 1. commission a disposal compa n y able to ( w ith a license to) colle ct, transport a nd d i spose of mat erials t hat c ont ain ars enic and ot her such industrial w aste mat er i als. 2. exclude the pr oduct from gene r al industrial w aste and household garbage, a nd en sure that the product is controlled (as industrial w aste subjec t to special control) up until final dispo s al. ? do not burn, de stro y , cut, c rus h, or chemic ally diss olv e t he product. ? do not lick the product or in an y w a y allo w it to e nter the mou th. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne3513m04 data sheet description rev. date page summary 1.00 oct 18, 2011 - first edition issued
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